PART |
Description |
Maker |
M27W101 M27W101-100B6TR M27W101-100F6TR M27W101-10 |
1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM 1兆位28KB x8低压紫外线EPROM和检察官办公室存储器 1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM 1兆位128KB x8低压紫外线EPROM和检察官办公室存储器 Hex Drivers 14-SOIC 0 to 70 1兆位28KB x8低压紫外线EPROM和检察官办公室存储器 64 Mbit 4Mb x16 3V Supply FlexibleROM Memory
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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HY29LV160TT-12 HY29LV160TF-12 HY29LV160TT-70 HY29L |
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PBGA48 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PDSO48 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PBGA48 Circular Connector; No. of Contacts:55; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:22-55
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http:// Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
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M39P0R9080E0ZAD M39P0R9080E0ZADE M39P0R9080E0ZADF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
Numonyx B.V
|
M29W064FB70N3E M29W064FB70N3F M29W064FT90N3E M29W0 |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
SST37VF512 |
(SST37VFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
|
Silicon Storage Technology
|
M36W108AB M36W108AB100ZM1T M36W108AB100ZM5T M36W10 |
8 MBIT (1MB X8, BOOT BLOCK) FLASH MEMORY AND 1 MBIT (128KB X8) SRAM LOW VOLTAGE MULTI-MEMORY PRODUCT 8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Memory 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product From old datasheet system
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ST Microelectronics SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
SST39LF010-45-4C-B3KE SST39LF010-45-4C-MM SST39LF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
SST[Silicon Storage Technology, Inc]
|
UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 9-Mbit (256K x 32) Pipelined DCD Sync SRAM 9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM x1 Fast Page Mode DRAM x1快速页面模式的DRAM
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TOKO, Inc. EPCOS AG
|
M25P32-VME6 M25P32-VMF6 M25P32-VMF6G M25P32-VMF6T |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门,串行闪 32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics]
|
4376 M27V401 M27V401-200B1TR M27V401-200B6TR M27V4 |
4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器 2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器 2.5-V/3.3-V 32-Bit Buffers/Drivers With 3-State outputs 96-LFBGA -40 to 85 Quadruple 2-Input Positive-NAND Gates 14-SOIC 0 to 70 2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 48-TSSOP -40 to 85 4 Mbit (512Kb x8) Low Voltage UV EPROM and OTP EPROM From old datasheet system 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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